A2T23H200W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V

SKU: A2T23H200W23SR6

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Quantity

150+

Price

R 2,001.89

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V

Products specifications

Output Power	51 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Gain	15.5 dB
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	1.8 A
Transistor Polarity	Dual N-Channel
Technology	Si

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Products specifications

Output Power	51 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Gain	15.5 dB
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	1.8 A
Transistor Polarity	Dual N-Channel
Technology	Si