RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 420-851 MHz, 107 W Avg., 48 V
Products specifications
|
Maximum Operating Temperature
|
+ 150 C |
|
Output Power
|
107 W |
|
Gain
|
19.9 dB |
|
Id - Continuous Drain Current
|
2.1 A |
|
Minimum Operating Temperature
|
- 40 C |
|
Product Type
|
RF MOSFET Transistors |
|
Technology
|
Si |
|
Vds - Drain-Source Breakdown Voltage
|
- 500 mV, 105 V |
|
Transistor Polarity
|
Dual N-Channel |