A3T18H455W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V

SKU: A3T18H455W23SR6

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Quantity

150+

Price

R 3,299.61

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V

Products specifications

Transistor Polarity	Dual N-Channel
Technology	Si
Gain	16.7 dB
Output Power	87 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	3.6 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors

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Products specifications

Transistor Polarity	Dual N-Channel
Technology	Si
Gain	16.7 dB
Output Power	87 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	3.6 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors