A3T21H450W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V

SKU: A3T21H450W23SR6

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Quantity

150+

Price

R 4,100.61

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V

Products specifications

Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Id - Continuous Drain Current	3.6 A
Gain	15.4 dB
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Output Power	87 W

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Products specifications

Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Id - Continuous Drain Current	3.6 A
Gain	15.4 dB
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Output Power	87 W