A3T23H300W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V

SKU: A3T23H300W23SR6

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R 3,875.30

R 2,893.85

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V

Products specifications

Output Power	63 W
Gain	15.6 dB
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Technology	Si
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Id - Continuous Drain Current	3.2 A

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Products specifications

Output Power	63 W
Gain	15.6 dB
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Technology	Si
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Id - Continuous Drain Current	3.2 A