AFV10700H-1090

RF Development Tools AFV10700H 960-1215 MHz Reference Circuit

SKU: AFV10700H-1090

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RF Development Tools AFV10700H 960-1215 MHz Reference Circuit

Products specifications

Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Output Power	700 W
Id - Continuous Drain Current	2.6 A
Product Type	RF MOSFET Transistors
Technology	Si
Gain	19.2 dB

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Products specifications

Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Output Power	700 W
Id - Continuous Drain Current	2.6 A
Product Type	RF MOSFET Transistors
Technology	Si
Gain	19.2 dB