RF MOSFET Transistors 700W 1030-1090MHz
Products specifications
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Output Power | 700 W |
| Transistor Polarity | Dual N-Channel |
| Product Type | RF MOSFET Transistors |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 105 V |
| Id - Continuous Drain Current | 2.6 A |
| Gain | 19.2 dB |