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771-BF556A-T/R

Manufacturer: NXP Semiconductors

BF556A,215

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RF JFET Transistors TAPE7 FET-RFSS

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RF JFET Transistors TAPE7 FET-RFSS

Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Maximum Drain Gate Voltage	- 30 V
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Transistor Type	JFET
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7 mA
Vgs - Gate-Source Breakdown Voltage	- 30 V
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	250 mW

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Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Maximum Drain Gate Voltage	- 30 V
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Transistor Type	JFET
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7 mA
Vgs - Gate-Source Breakdown Voltage	- 30 V
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	250 mW