BFU550R

RF Bipolar Transistors NPN wideband silicon RF transistor

SKU: BFU550R

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R 25.63

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R 6.08

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RF Bipolar Transistors NPN wideband silicon RF transistor

Products specifications

Collector- Emitter Voltage VCEO Max	16 V
Minimum Operating Temperature	- 40 C
Transistor Polarity	NPN
Transistor Type	Bipolar Wideband
Emitter- Base Voltage VEBO	2 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Configuration	Single
Continuous Collector Current	15 mA
Product Type	RF Bipolar Transistors

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Products specifications

Collector- Emitter Voltage VCEO Max	16 V
Minimum Operating Temperature	- 40 C
Transistor Polarity	NPN
Transistor Type	Bipolar Wideband
Emitter- Base Voltage VEBO	2 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Configuration	Single
Continuous Collector Current	15 mA
Product Type	RF Bipolar Transistors