BFU550XAR

RF Bipolar Transistors NPN wideband silicon RF transistor

SKU: BFU550XAR

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R 12.05

R 7.56

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R 5.79

R 5.66

R 4.87

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RF Bipolar Transistors NPN wideband silicon RF transistor

Products specifications

Minimum Operating Temperature	- 40 C
Emitter- Base Voltage VEBO	2 V
Continuous Collector Current	15 mA
Transistor Type	Bipolar Wideband
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	16 V
Maximum Operating Temperature	+ 150 C
Product Type	RF Bipolar Transistors
Technology	Si

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Products specifications

Minimum Operating Temperature	- 40 C
Emitter- Base Voltage VEBO	2 V
Continuous Collector Current	15 mA
Transistor Type	Bipolar Wideband
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	16 V
Maximum Operating Temperature	+ 150 C
Product Type	RF Bipolar Transistors
Technology	Si