RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V
Products specifications
|
Gain
|
20.9 dB |
|
Output Power
|
1.26 W |
|
Transistor Polarity
|
N-Channel |
|
Id - Continuous Drain Current
|
154 mA |
|
Vds - Drain-Source Breakdown Voltage
|
- 500 mV, 65 V |
|
Product Type
|
RF MOSFET Transistors |
|
Technology
|
Si |
|
Maximum Operating Temperature
|
+ 150 C |
|
Minimum Operating Temperature
|
- 40 C |