GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
Lead Time: 140 Days
Products specifications
|
Gain
|
17.5 dB |
|
Pd - Power Dissipation
|
127 W |
|
Vgs - Gate-Source Breakdown Voltage
|
145 V |
|
Vds - Drain-Source Breakdown Voltage
|
50 V |
|
Transistor Polarity
|
N-Channel |
|
Transistor Type
|
HEMT |
|
Maximum Operating Temperature
|
+ 85 C |
|
Output Power
|
162 W |
|
Minimum Operating Temperature
|
- 40 C |
|
Id - Continuous Drain Current
|
4 A |
|
Product Type
|
RF JFET Transistors |
|
Technology
|
GaN SiC |
|
Mounting Style
|
Screw Mount |
|
Packaging
|
Tray |