QPD1014SR

GaN FETs .03-1.2GHz 15W 50V GaN
Lead Time: 0 Days

SKU: QPD1014SR

Availability: 27 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

25+

100+

Price

R 2,390.70

R 1,715.55

R 1,403.10

Free shipping

GaN FETs .03-1.2GHz 15W 50V GaN
Lead Time: 0 Days

Products specifications

Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Gain	18.4 dB
Maximum Drain Gate Voltage	55 V
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	15.8 W
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Output Power	12.5 W

Your name *

Your email *

Enquiry *

Products specifications

Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Gain	18.4 dB
Maximum Drain Gate Voltage	55 V
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	15.8 W
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Output Power	12.5 W