QPD1823

RF JFET Transistors 1.8-2.4GHz GaN 220W 48V

SKU: QPD1823

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Price

R 3,462.37

R 2,959.98

R 2,621.13

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RF JFET Transistors 1.8-2.4GHz GaN 220W 48V

Products specifications

Maximum Operating Temperature	-
Transistor Type	HEMT
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	-
Vds - Drain-Source Breakdown Voltage	-
Output Power	220 W
Transistor Polarity	N-Channel
Packaging	Tray
Gain	21 dB
Id - Continuous Drain Current	-
Technology	GaN SiC

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Products specifications

Maximum Operating Temperature	-
Transistor Type	HEMT
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	-
Vds - Drain-Source Breakdown Voltage	-
Output Power	220 W
Transistor Polarity	N-Channel
Packaging	Tray
Gain	21 dB
Id - Continuous Drain Current	-
Technology	GaN SiC