QPD1881L

RF JFET Transistors 2.7-2.9 GHz, 400W,50V,GaN RF Pwr Tr
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SKU: QPD1881L

Availability: 13 in stock

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R 17,365.42

R 12,632.47

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RF JFET Transistors 2.7-2.9 GHz, 400W,50V,GaN RF Pwr Tr
Lead Time: 0 Days

Products specifications

Vgs - Gate-Source Breakdown Voltage	- 7 V to 2 V
Transistor Type	HEMT
Technology	GaN SiC
Pd - Power Dissipation	237 W
Id - Continuous Drain Current	13 A
Maximum Operating Temperature	+ 85 C
Gain	21.2 dB
Vds - Drain-Source Breakdown Voltage	145 V
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	55 V
Product Type	RF JFET Transistors

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Products specifications

Vgs - Gate-Source Breakdown Voltage	- 7 V to 2 V
Transistor Type	HEMT
Technology	GaN SiC
Pd - Power Dissipation	237 W
Id - Continuous Drain Current	13 A
Maximum Operating Temperature	+ 85 C
Gain	21.2 dB
Vds - Drain-Source Breakdown Voltage	145 V
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	55 V
Product Type	RF JFET Transistors