QPD2730

RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
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SKU: QPD2730

Availability: 20 in stock

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R 3,983.21

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R 3,292.69

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RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN
Lead Time: 0 Days

Products specifications

Minimum Operating Temperature	- 40 C
Gain	16 dB
Transistor Type	HEMT
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	210 mA
Output Power	36 W
Vds - Drain-Source Breakdown Voltage	48 V
Maximum Drain Gate Voltage	55 V
Packaging	Waffle
Product Type	RF JFET Transistors
Pd - Power Dissipation	18.6 W
Technology	GaN SiC

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Products specifications

Minimum Operating Temperature	- 40 C
Gain	16 dB
Transistor Type	HEMT
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	210 mA
Output Power	36 W
Vds - Drain-Source Breakdown Voltage	48 V
Maximum Drain Gate Voltage	55 V
Packaging	Waffle
Product Type	RF JFET Transistors
Pd - Power Dissipation	18.6 W
Technology	GaN SiC