QPD2796

RF JFET Transistors 2.5-2.7GHz GaN 200W 48V

SKU: QPD2796

Qty:

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Quantity

250+

Price

R 2,638.94

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RF JFET Transistors 2.5-2.7GHz GaN 200W 48V

Products specifications

Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	-
Gain	20 dB
Minimum Operating Temperature	- 40 C
Technology	GaN SiC
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Id - Continuous Drain Current	-
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Operating Temperature	-
Output Power	200 W
Transistor Type	HEMT
Vds - Drain-Source Breakdown Voltage	-

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Products specifications

Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	-
Gain	20 dB
Minimum Operating Temperature	- 40 C
Technology	GaN SiC
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Id - Continuous Drain Current	-
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Operating Temperature	-
Output Power	200 W
Transistor Type	HEMT
Vds - Drain-Source Breakdown Voltage	-