T1G4012036-FL

GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak

SKU: T1G4012036-FL

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Quantity

25+

Price

R 11,568.49

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GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak

Products specifications

Pd - Power Dissipation	117 W
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	- 2.9 V
Transistor Type	HEMT
Id - Continuous Drain Current	12 A
Output Power	24 W
Packaging	Tray
Product Type	RF JFET Transistors
Technology	GaN SiC
Vds - Drain-Source Breakdown Voltage	36 V
Gain	18.4 dB

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Products specifications

Pd - Power Dissipation	117 W
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	- 2.9 V
Transistor Type	HEMT
Id - Continuous Drain Current	12 A
Output Power	24 W
Packaging	Tray
Product Type	RF JFET Transistors
Technology	GaN SiC
Vds - Drain-Source Breakdown Voltage	36 V
Gain	18.4 dB