TGF2018

Call for pricing

RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm

SKU: TGF2018

Qty:

Free shipping

RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm

Products specifications

Id - Continuous Drain Current	58 mA
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	- 15 V
Transistor Type	pHEMT
Minimum Operating Temperature	- 65 C
Pd - Power Dissipation	640 mW
Maximum Operating Temperature	+ 150 C
Product Type	RF JFET Transistors
Gain	14 dB
Technology	GaAs
Maximum Drain Gate Voltage	12 V
Vds - Drain-Source Breakdown Voltage	8 V

Your name *

Your email *

Enquiry *

Products specifications

Id - Continuous Drain Current	58 mA
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	- 15 V
Transistor Type	pHEMT
Minimum Operating Temperature	- 65 C
Pd - Power Dissipation	640 mW
Maximum Operating Temperature	+ 150 C
Product Type	RF JFET Transistors
Gain	14 dB
Technology	GaAs
Maximum Drain Gate Voltage	12 V
Vds - Drain-Source Breakdown Voltage	8 V