QPD1004SR

GaN FETs .03-1.2GHz 25W 50V GaN
Lead Time: 0 Days

SKU: QPD1004SR

Availability: 53 in stock

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R 3,821.08

R 2,771.24

R 2,002.64

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GaN FETs .03-1.2GHz 25W 50V GaN
Lead Time: 0 Days

Products specifications

Transistor Type HEMT

Gain 20.8 dB

Pd - Power Dissipation 27.6 W

Vgs - Gate-Source Breakdown Voltage 145 V

Vds - Drain-Source Breakdown Voltage 50 V

Transistor Polarity N-Channel

Product Type RF JFET Transistors

Id - Continuous Drain Current 3.6 A

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Output Power 40 W

Technology GaN SiC

Maximum Drain Gate Voltage 55 V

Packaging Cut Tape, MouseReel, Reel

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Products specifications

Transistor Type HEMT

Gain 20.8 dB

Pd - Power Dissipation 27.6 W

Vgs - Gate-Source Breakdown Voltage 145 V

Vds - Drain-Source Breakdown Voltage 50 V

Transistor Polarity N-Channel

Product Type RF JFET Transistors

Id - Continuous Drain Current 3.6 A

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 85 C

Output Power 40 W

Technology GaN SiC

Maximum Drain Gate Voltage 55 V

Packaging Cut Tape, MouseReel, Reel

Transistor Type	HEMT
Gain	20.8 dB
Pd - Power Dissipation	27.6 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3.6 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Output Power	40 W
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Packaging	Cut Tape, MouseReel, Reel

Transistor Type	HEMT
Gain	20.8 dB
Pd - Power Dissipation	27.6 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3.6 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Output Power	40 W
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Packaging	Cut Tape, MouseReel, Reel

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