QPD1013SR

GaN FETs DC-2.7GHz 150W PAE 64.8%

SKU: QPD1013SR

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

100+

Price

R 6,595.09

Free shipping

GaN FETs DC-2.7GHz 150W PAE 64.8%

Products specifications

Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Drain Gate Voltage	65 V
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	67 W
Id - Continuous Drain Current	1.7 A
Gain	21.8 dB
Technology	GaN SiC
Output Power	178 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT

Your name *

Your email *

Enquiry *

Products specifications

Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Drain Gate Voltage	65 V
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	67 W
Id - Continuous Drain Current	1.7 A
Gain	21.8 dB
Technology	GaN SiC
Output Power	178 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT