QPD1014SR

GaN FETs .03-1.2GHz 15W 50V GaN
Lead Time: 0 Days

SKU: QPD1014SR

Availability: 27 in stock

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R 2,350.40

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R 1,379.45

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GaN FETs .03-1.2GHz 15W 50V GaN
Lead Time: 0 Days

Products specifications

Maximum Operating Temperature + 85 C

Transistor Type HEMT

Product Type RF JFET Transistors

Transistor Polarity N-Channel

Gain 18.4 dB

Maximum Drain Gate Voltage 55 V

Id - Continuous Drain Current 1 A

Pd - Power Dissipation 15.8 W

Vds - Drain-Source Breakdown Voltage 50 V

Vgs - Gate-Source Breakdown Voltage 145 V

Technology GaN SiC

Packaging Cut Tape, MouseReel, Reel

Minimum Operating Temperature - 40 C

Output Power 12.5 W

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Products specifications

Maximum Operating Temperature + 85 C

Transistor Type HEMT

Product Type RF JFET Transistors

Transistor Polarity N-Channel

Gain 18.4 dB

Maximum Drain Gate Voltage 55 V

Id - Continuous Drain Current 1 A

Pd - Power Dissipation 15.8 W

Vds - Drain-Source Breakdown Voltage 50 V

Vgs - Gate-Source Breakdown Voltage 145 V

Technology GaN SiC

Packaging Cut Tape, MouseReel, Reel

Minimum Operating Temperature - 40 C

Output Power 12.5 W

Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Gain	18.4 dB
Maximum Drain Gate Voltage	55 V
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	15.8 W
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Output Power	12.5 W

Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Gain	18.4 dB
Maximum Drain Gate Voltage	55 V
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	15.8 W
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Output Power	12.5 W

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