QPD1016

GaN FETs DC-1.7GHz,500W,50V,GaNRFTr

SKU: QPD1016

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

25+

Price

R 32,650.38

Free shipping

GaN FETs DC-1.7GHz,500W,50V,GaNRFTr

Products specifications

Vds - Drain-Source Breakdown Voltage	145 V
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 7 V to 1.5 V
Output Power	680 W
Transistor Type	HEMT
Id - Continuous Drain Current	70 A
Maximum Operating Temperature	+ 85 C
Gain	23.9 dB
Technology	GaN SiC
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Pd - Power Dissipation	714 W
Maximum Drain Gate Voltage	55 V

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	145 V
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 7 V to 1.5 V
Output Power	680 W
Transistor Type	HEMT
Id - Continuous Drain Current	70 A
Maximum Operating Temperature	+ 85 C
Gain	23.9 dB
Technology	GaN SiC
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Pd - Power Dissipation	714 W
Maximum Drain Gate Voltage	55 V