TGF2160

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RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE

SKU: TGF2160

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RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE

Products specifications

Transistor Type	pHEMT
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	- 7 V
Pd - Power Dissipation	5.6 W
Product Type	RF JFET Transistors
Technology	GaAs
Gain	10.4 dB
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	517 mA
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 65 C

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Products specifications

Transistor Type	pHEMT
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	- 7 V
Pd - Power Dissipation	5.6 W
Product Type	RF JFET Transistors
Technology	GaAs
Gain	10.4 dB
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	517 mA
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 65 C