MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
Lead Time: 0 Days
Products specifications
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 150 nC |
| Rds On - Drain-Source Resistance | 2.8 mOhms |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 136 W |
| Qualification | AEC-Q101 |
| Technology | Si |
| Number of Channels | 1 Channel |
| Minimum Operating Temperature | - 55 C |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 135 A |
| Configuration | Single |
| Tradename | TrenchFET |
| Channel Mode | Enhancement |