MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
Lead Time: 0 Days
Products specifications
|
Packaging
|
Cut Tape, MouseReel, Reel |
|
Vgs - Gate-Source Voltage
|
20 V |
|
Qg - Gate Charge
|
150 nC |
|
Rds On - Drain-Source Resistance
|
2.8 mOhms |
|
Vds - Drain-Source Breakdown Voltage
|
100 V |
|
Maximum Operating Temperature
|
+ 175 C |
|
Pd - Power Dissipation
|
136 W |
|
Qualification
|
AEC-Q101 |
|
Technology
|
Si |
|
Number of Channels
|
1 Channel |
|
Minimum Operating Temperature
|
- 55 C |
|
Vgs th - Gate-Source Threshold Voltage
|
1.5 V |
|
Transistor Polarity
|
N-Channel |
|
Id - Continuous Drain Current
|
135 A |
|
Configuration
|
Single |
|
Tradename
|
TrenchFET |
|
Channel Mode
|
Enhancement |