Phototransistors TO-18 450-1080nm +/-40 deg
Lead Time: 25 Days
Products specifications
|
Product
|
Phototransistors |
|
Maximum Operating Temperature
|
+ 125 C |
|
Collector-Emitter Breakdown Voltage
|
70 V |
|
Mounting Style
|
Through Hole |
|
Pd - Power Dissipation
|
250 mW |
|
Collector- Emitter Voltage VCEO Max
|
80 V |
|
Dark Current
|
100 nA |
|
Collector-Emitter Saturation Voltage
|
0.15 V |
|
Peak Wavelength
|
850 nm |
|
Maximum On-State Collector Current
|
50 mA |
|
Minimum Operating Temperature
|
- 40 C |