Phototransistors NPN PHOTOTRANSISTOR
Products specifications
|
Fall Time
|
20 us |
|
Collector-Emitter Saturation Voltage
|
0.4 V |
|
Collector- Emitter Voltage VCEO Max
|
50 V |
|
Minimum Operating Temperature
|
- 55 C |
|
Maximum Operating Temperature
|
+ 125 C |
|
Collector-Emitter Breakdown Voltage
|
50 V |
|
Pd - Power Dissipation
|
50 mW |
|
Mounting Style
|
Panel Mount |
|
Rise Time
|
20 us |
|
Product
|
Phototransistors |
|
Dark Current
|
25 nA |