A2T18S261W12NR3

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V

SKU: A2T18S261W12NR3

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V

Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Minimum Operating Temperature	- 40 C
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Gain	18.2 dB
Output Power	56 W
Id - Continuous Drain Current	3 A
Maximum Operating Temperature	+ 125 C
Technology	Si

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Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Minimum Operating Temperature	- 40 C
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Gain	18.2 dB
Output Power	56 W
Id - Continuous Drain Current	3 A
Maximum Operating Temperature	+ 125 C
Technology	Si