A2V09H525-04NR6

RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V

SKU: A2V09H525-04NR6

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Quantity

150+

Price

R 5,367.35

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RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V

Products specifications

Gain	18.9 dB
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Output Power	120 W
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Id - Continuous Drain Current	2.8 A
Minimum Operating Temperature	- 40 C
Technology	Si
Transistor Polarity	Dual N-Channel

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Products specifications

Gain	18.9 dB
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Output Power	120 W
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Id - Continuous Drain Current	2.8 A
Minimum Operating Temperature	- 40 C
Technology	Si
Transistor Polarity	Dual N-Channel