AFT09MS007NT1

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V

SKU: AFT09MS007NT1

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Quantity

1000+

Price

R 103.57

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RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V

Products specifications

Product Type	RF MOSFET Transistors
Technology	Si
Gain	15.2 dB
Output Power	7.3 W
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	400 mV, 30 V
Maximum Operating Temperature	+ 150 C

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Products specifications

Product Type	RF MOSFET Transistors
Technology	Si
Gain	15.2 dB
Output Power	7.3 W
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	400 mV, 30 V
Maximum Operating Temperature	+ 150 C