RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
Products specifications
|
Technology
|
Si |
|
Vds - Drain-Source Breakdown Voltage
|
- 500 mV, 65 V |
|
Minimum Operating Temperature
|
- 40 C |
|
Maximum Operating Temperature
|
+ 150 C |
|
Product Type
|
RF MOSFET Transistors |
|
Gain
|
17.6 dB |
|
Output Power
|
1.5 W |
|
Id - Continuous Drain Current
|
132 mA |
|
Packaging
|
Cut Tape, MouseReel, Reel |
|
Transistor Polarity
|
N-Channel |