MHT1004GNR3

Call for pricing

RF MOSFET Transistors MHT1004GN/FM2///REEL 13 Q2 DP

Availability: Out of stock

Qty:

Free shipping

RF MOSFET Transistors MHT1004GN/FM2///REEL 13 Q2 DP

Products specifications

Id - Continuous Drain Current	3.7 A
Transistor Polarity	N-Channel
Gain	15.2 dB
Technology	Si
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Packaging	Reel
Product Type	RF MOSFET Transistors
Output Power	300 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C

Your name *

Your email *

Enquiry *

Products specifications

Id - Continuous Drain Current	3.7 A
Transistor Polarity	N-Channel
Gain	15.2 dB
Technology	Si
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Packaging	Reel
Product Type	RF MOSFET Transistors
Output Power	300 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C