MHT1008NT1

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RF MOSFET Transistors MHT1008N/PLD4L///REEL 7 Q1 DP

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RF MOSFET Transistors MHT1008N/PLD4L///REEL 7 Q1 DP

Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Gain	18.6 dB
Output Power	12.5 W
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Minimum Operating Temperature	- 40 C
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	154 mA
Transistor Polarity	N-Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Gain	18.6 dB
Output Power	12.5 W
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Minimum Operating Temperature	- 40 C
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	154 mA
Transistor Polarity	N-Channel