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RF MOSFET Transistors HV8 WCDMA 66W 28V NI780S

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RF MOSFET Transistors HV8 WCDMA 66W 28V NI780S

Products specifications

Vds - Drain-Source Breakdown Voltage	70 V
Product Type	RF MOSFET Transistors
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Gain	19.4 dB
Transistor Polarity	N-Channel
Output Power	65 W
Technology	Si

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Products specifications

Vds - Drain-Source Breakdown Voltage	70 V
Product Type	RF MOSFET Transistors
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Gain	19.4 dB
Transistor Polarity	N-Channel
Output Power	65 W
Technology	Si