RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Lead Time: 0 Days
Products specifications
|
Maximum Operating Temperature
|
+ 150 C |
|
Packaging
|
Cut Tape, MouseReel, Reel |
|
Minimum Operating Temperature
|
- 40 C |
|
Gain
|
20.8 dB |
|
Transistor Polarity
|
N-Channel |
|
Technology
|
Si |
|
Vds - Drain-Source Breakdown Voltage
|
- 500 mV, 30 V |
|
Product Type
|
RF MOSFET Transistors |
|
Output Power
|
3.2 W |
|
Id - Continuous Drain Current
|
2.6 A |