2SJ652-1E

MOSFET PCH 4V DRIVE SERIES
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SKU: 2SJ652-1E

Availability: 6 in stock

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R 65.36

R 61.77

R 52.29

R 47.16

R 38.70

R 32.04

R 29.22

R 28.20

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MOSFET PCH 4V DRIVE SERIES
Lead Time: 0 Days

Products specifications

Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	28 A
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	30 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	28.5 mOhms
Packaging	Tube
Technology	Si
Transistor Polarity	P-Channel
Qg - Gate Charge	80 nC
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	28 A
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	30 W
Number of Channels	1 Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	28.5 mOhms
Packaging	Tube
Technology	Si
Transistor Polarity	P-Channel
Qg - Gate Charge	80 nC
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C