RF Bipolar Transistors Transistor,110W,2.7-2.9GHz,100us,10%
Products specifications
|
Configuration
|
Single |
|
Continuous Collector Current
|
8 A |
|
Maximum Operating Temperature
|
+ 200 C |
|
Output Power
|
110 W |
|
Technology
|
Si |
|
Transistor Type
|
Bipolar |
|
Emitter- Base Voltage VEBO
|
3 V |
|
Transistor Polarity
|
NPN |
|
Mounting Style
|
Flange Mount |
|
Product Type
|
RF Bipolar Transistors |
|
Collector- Emitter Voltage VCEO Max
|
63 V |