CG2H30070F

GaN FETs 70W, DC-4.0GHz, 28V, RF Power GaN HEMT
Lead Time: 182 Days

SKU: CG2H30070F-TB2

Availability: 2 in stock

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GaN FETs 70W, DC-4.0GHz, 28V, RF Power GaN HEMT
Lead Time: 182 Days

Products specifications

Technology	GaN
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Mounting Style	Screw Mount
Pd - Power Dissipation	-
Gain	12.4 dB
Transistor Type	HEMT
Product Type	RF JFET Transistors
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Output Power	70 W
Id - Continuous Drain Current	12 A

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Products specifications

Technology	GaN
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Mounting Style	Screw Mount
Pd - Power Dissipation	-
Gain	12.4 dB
Transistor Type	HEMT
Product Type	RF JFET Transistors
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Output Power	70 W
Id - Continuous Drain Current	12 A