RF Development Tools Test Board without GaN HEMT
Products specifications
| Gain | 12 dB |
| Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
| Transistor Polarity | N-Channel |
| Packaging | Bulk |
| Maximum Drain Gate Voltage | 28 V |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 12 A |
| Technology | GaN |
| Output Power | 85 W |
| Maximum Operating Temperature | + 150 C |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Minimum Operating Temperature | - 40 C |
| Product Type | RF JFET Transistors |
| Mounting Style | Screw Mount |