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941-CG2H30070FTB2

Manufacturer: Wolfspeed / Cree

CG2H30070F-TB2

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RF Development Tools Test Board without GaN HEMT

SKU: CG2H30070F-TB2

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Specifications
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RF Development Tools Test Board without GaN HEMT

Products specifications

Gain	12 dB
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Transistor Polarity	N-Channel
Packaging	Bulk
Maximum Drain Gate Voltage	28 V
Transistor Type	HEMT
Id - Continuous Drain Current	12 A
Technology	GaN
Output Power	85 W
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	120 V
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Mounting Style	Screw Mount

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Products specifications

Gain	12 dB
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Transistor Polarity	N-Channel
Packaging	Bulk
Maximum Drain Gate Voltage	28 V
Transistor Type	HEMT
Id - Continuous Drain Current	12 A
Technology	GaN
Output Power	85 W
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	120 V
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Mounting Style	Screw Mount