CG2H40010F

GaN FETs GaN HEMT DC-8.0GHz, 10 Watt
Lead Time: 182 Days

SKU: CG2H40010F

Availability: 922 in stock

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GaN FETs GaN HEMT DC-8.0GHz, 10 Watt
Lead Time: 182 Days

Products specifications

Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Maximum Operating Temperature	+ 150 C
Product Type	RF JFET Transistors
Packaging	Tray
Output Power	10 W
Technology	GaN
Maximum Drain Gate Voltage	-
Mounting Style	Screw Mount
Id - Continuous Drain Current	1.5 A
Transistor Type	HEMT
Gain	16.5 dB
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	-

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Products specifications

Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Maximum Operating Temperature	+ 150 C
Product Type	RF JFET Transistors
Packaging	Tray
Output Power	10 W
Technology	GaN
Maximum Drain Gate Voltage	-
Mounting Style	Screw Mount
Id - Continuous Drain Current	1.5 A
Transistor Type	HEMT
Gain	16.5 dB
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	-