GaN FETs GaN HEMT DC-6.0GHz, 25 Watt
Products specifications
| Minimum Operating Temperature | - 40 C |
| Id - Continuous Drain Current | 3 A |
| Transistor Polarity | N-Channel |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | HEMT |
| Maximum Drain Gate Voltage | - |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Packaging | Tray |
| Pd - Power Dissipation | - |
| Product Type | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
| Mounting Style | Screw Mount |
| Output Power | 25 W |
| Technology | GaN |
| Gain | 15 dB |