CG2H80015D-GP4

GaN FETs GaN HEMT Die DC-8.0GHz, 15 Watt

SKU: CG2H80015D-GP4

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Quantity

10+

Price

R 2,761.16

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GaN FETs GaN HEMT Die DC-8.0GHz, 15 Watt

Products specifications

Packaging	Gel Pack
Gain	17 dB
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Maximum Operating Temperature	+ 225 C
Technology	GaN
Vds - Drain-Source Breakdown Voltage	120 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Output Power	15 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	1.5 A

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Products specifications

Packaging	Gel Pack
Gain	17 dB
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Maximum Operating Temperature	+ 225 C
Technology	GaN
Vds - Drain-Source Breakdown Voltage	120 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Output Power	15 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	1.5 A