GaN FETs GaN HEMT Die DC-8.0GHz, 60 Watt
Lead Time: 182 Days
Products specifications
|
Id - Continuous Drain Current
|
6 A |
|
Pd - Power Dissipation
|
- |
|
Maximum Drain Gate Voltage
|
- |
|
Vgs - Gate-Source Breakdown Voltage
|
- 10 V, 2 V |
|
Maximum Operating Temperature
|
+ 225 C |
|
Packaging
|
Gel Pack |
|
Technology
|
GaN |
|
Vds - Drain-Source Breakdown Voltage
|
120 V |
|
Transistor Polarity
|
N-Channel |
|
Gain
|
15 dB |
|
Product Type
|
RF JFET Transistors |
|
Output Power
|
60 W |
|
Transistor Type
|
HEMT |