CGH27030P

GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Lead Time: 30 Days

SKU: CGH27030P

Availability: 60 in stock

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GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Lead Time: 30 Days

Products specifications

Technology	GaN
Minimum Operating Temperature	- 40 C
Packaging	Bulk
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 150 C
Output Power	30 W
Pd - Power Dissipation	14 W
Id - Continuous Drain Current	7 A
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Gain	15 dB
Maximum Drain Gate Voltage	28 V
Transistor Type	HEMT
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V

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Products specifications

Technology	GaN
Minimum Operating Temperature	- 40 C
Packaging	Bulk
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 150 C
Output Power	30 W
Pd - Power Dissipation	14 W
Id - Continuous Drain Current	7 A
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Gain	15 dB
Maximum Drain Gate Voltage	28 V
Transistor Type	HEMT
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V