CGH40006P

GaN FETs GaN HEMT DC-6.0GHz, 6 Watt
Lead Time: 182 Days

SKU: CGH40006P

Availability: 445 in stock

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GaN FETs GaN HEMT DC-6.0GHz, 6 Watt
Lead Time: 182 Days

Products specifications

Output Power	9 W
Vds - Drain-Source Breakdown Voltage	120 V
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Gain	13 dB
Id - Continuous Drain Current	0.75 A
Transistor Type	HEMT
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Technology	GaN
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Maximum Drain Gate Voltage	-

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Products specifications

Output Power	9 W
Vds - Drain-Source Breakdown Voltage	120 V
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Gain	13 dB
Id - Continuous Drain Current	0.75 A
Transistor Type	HEMT
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Technology	GaN
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Maximum Drain Gate Voltage	-