CGH40010F

GaN FETs GaN HEMT DC-6.0GHz, 10 Watt
Lead Time: 182 Days

SKU: CGH40010F

Availability: 3233 in stock

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GaN FETs GaN HEMT DC-6.0GHz, 10 Watt
Lead Time: 182 Days

Products specifications

Id - Continuous Drain Current	1.5 A
Transistor Type	HEMT
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	120 V
Gain	14.5 dB
Mounting Style	Screw Mount
Pd - Power Dissipation	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Technology	GaN
Maximum Drain Gate Voltage	-
Maximum Operating Temperature	+ 150 C
Output Power	12.5 W
Minimum Operating Temperature	- 40 C
Packaging	Tube

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Products specifications

Id - Continuous Drain Current	1.5 A
Transistor Type	HEMT
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	120 V
Gain	14.5 dB
Mounting Style	Screw Mount
Pd - Power Dissipation	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Technology	GaN
Maximum Drain Gate Voltage	-
Maximum Operating Temperature	+ 150 C
Output Power	12.5 W
Minimum Operating Temperature	- 40 C
Packaging	Tube