CGH40025F

GaN FETs GaN HEMT DC-6.0GHz, 25 Watt
Lead Time: 182 Days

SKU: CGH40025F

Availability: 356 in stock

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GaN FETs GaN HEMT DC-6.0GHz, 25 Watt
Lead Time: 182 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Output Power	30 W
Packaging	Tube
Product Type	RF JFET Transistors
Technology	GaN
Pd - Power Dissipation	-
Id - Continuous Drain Current	3 A
Vds - Drain-Source Breakdown Voltage	120 V
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Transistor Type	HEMT
Transistor Polarity	N-Channel
Mounting Style	Screw Mount
Gain	15 dB

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Products specifications

Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Output Power	30 W
Packaging	Tube
Product Type	RF JFET Transistors
Technology	GaN
Pd - Power Dissipation	-
Id - Continuous Drain Current	3 A
Vds - Drain-Source Breakdown Voltage	120 V
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Transistor Type	HEMT
Transistor Polarity	N-Channel
Mounting Style	Screw Mount
Gain	15 dB