CGH60008D-GP4

GaN FETs GaN HEMT Die DC-6.0GHz, 8 Watt
Lead Time: 182 Days

SKU: CGH60008D-GP4

Availability: 720 in stock

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Quantity

10+

Price

R 1,149.08

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GaN FETs GaN HEMT Die DC-6.0GHz, 8 Watt
Lead Time: 182 Days

Products specifications

Gain	15 dB
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	120 V
Technology	GaN
Packaging	Waffle
Maximum Operating Temperature	-
Pd - Power Dissipation	-
Id - Continuous Drain Current	0.75 A
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Minimum Operating Temperature	-
Output Power	8 W
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Transistor Type	HEMT

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Products specifications

Gain	15 dB
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	120 V
Technology	GaN
Packaging	Waffle
Maximum Operating Temperature	-
Pd - Power Dissipation	-
Id - Continuous Drain Current	0.75 A
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Minimum Operating Temperature	-
Output Power	8 W
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Transistor Type	HEMT