CGH60015D-GP4

GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt
Lead Time: 182 Days

SKU: CGH60015D-GP4

Availability: 50 in stock

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Quantity

10+

Price

R 3,172.47

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GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt
Lead Time: 182 Days

Products specifications

Technology	GaN
Output Power	15 W
Product Type	RF JFET Transistors
Maximum Operating Temperature	-
Minimum Operating Temperature	-
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Type	HEMT
Transistor Polarity	N-Channel
Gain	15 dB
Id - Continuous Drain Current	1.5 A
Packaging	Waffle
Pd - Power Dissipation	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Maximum Drain Gate Voltage	-

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Products specifications

Technology	GaN
Output Power	15 W
Product Type	RF JFET Transistors
Maximum Operating Temperature	-
Minimum Operating Temperature	-
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Type	HEMT
Transistor Polarity	N-Channel
Gain	15 dB
Id - Continuous Drain Current	1.5 A
Packaging	Waffle
Pd - Power Dissipation	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Maximum Drain Gate Voltage	-